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PreprintCC BY 4.0arXiv

Layer-by-layer growth of highly aligned MoS2 nanoribbon arrays

  • Kaichi Yamamoto
  • Pablo Solís-Fernández
  • Haiming Sun
  • Yanlin Gao
  • Yeri Lee
  • Yushan Tseng
  • Aika Uchida
  • Masahiro Hara
  • Sunmin Ryu
  • Yung-Chang Lin
  • Susumu Okada
  • Kazu Suenaga
1 more authors
  • Hiroki Ago
Open at sourcePDFDOICite

Abstract

One-dimensional transition metal dichalcogenides (TMD) nanoribbons (NRs) offer a promising route to aggressive channel-width scaling in nanoscale transistors. However, controlling their layer number, a key determinant of device performance, has remained elusive. Here, we demonstrate a chemical vapor deposition (CVD) approach for layer-by-layer growth of MoS2 NRs on a low-symmetry sapphire surface. This approach enables the oriented growth of single-crystalline bilayer NRs with a 2H stacking configuration, while maintaining widths below 20 nm. Increasing the MoO3 precursor supply was found to be crucial for promoting the growth of the second and subsequent layers. By controlling the growth time and precursor supply, the layer number of MoS2 NRs can be increased up to four layers. This method can also be extended to the growth of vertical MoS2/WS2 hetero-NRs. The average carrier mobility and current density of bilayer NR field-effect transistors (FETs) are two- and three-times higher than those of monolayer counterparts, respectively, and a maximum mobility of 86.7 cm2V−1s−1 was attained with a bilayer NR-FET. These results highlight layer number as a key parameter for optimizing NR device performance. Our thickness-controlled growth strategy provides a general route towards TMD NR-based transistors with enhanced scalability and performance.

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Cite

BibTeXRIS
BibTeX
@misc{yamamoto2026layerbylayer,
  title = {{Layer-by-layer growth of highly aligned MoS$_2$ nanoribbon arrays}},
  author = {Kaichi Yamamoto and Pablo Solís-Fernández and Haiming Sun and Yanlin Gao and Yeri Lee and Yushan Tseng and Aika Uchida and Masahiro Hara and Sunmin Ryu and Yung-Chang Lin and Susumu Okada and Kazu Suenaga and Hiroki Ago},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.00987},
  eprint = {2610.00987},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.00987},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Layer-by-layer growth of highly aligned MoS_2 nanoribbon arrays
AU  - Kaichi Yamamoto
AU  - Pablo Solís-Fernández
AU  - Haiming Sun
AU  - Yanlin Gao
AU  - Yeri Lee
AU  - Yushan Tseng
AU  - Aika Uchida
AU  - Masahiro Hara
AU  - Sunmin Ryu
AU  - Yung-Chang Lin
AU  - Susumu Okada
AU  - Kazu Suenaga
AU  - Hiroki Ago
PY  - 2026
DA  - 2026/10/01
PB  - arXiv
DO  - 10.48550/arxiv.2610.00987
UR  - https://arxiv.org/abs/2610.00987
AB  - One-dimensional transition metal dichalcogenides (TMD) nanoribbons (NRs) offer a promising route to aggressive channel-width scaling in nanoscale transistors. However, controlling their layer number, a key determinant of device performance, has remained elusive. Here, we demonstrate a chemical vapor deposition (CVD) approach for layer-by-layer growth of MoS_2 NRs on a low-symmetry sapphire surface. This approach enables the oriented growth of single-crystalline bilayer NRs with a 2H stacking configuration, while maintaining widths below 20 nm. Increasing the MoO_3 precursor supply was found to be crucial for promoting the growth of the second and subsequent layers. By controlling the growth time and precursor supply, the layer number of MoS_2 NRs can be increased up to four layers. This method can also be extended to the growth of vertical MoS_2/WS_2 hetero-NRs. The average carrier mobility and current density of bilayer NR field-effect transistors (FETs) are two- and three-times higher than those of monolayer counterparts, respectively, and a maximum mobility of 86.7 cm^2V^−1s^−1 was attained with a bilayer NR-FET. These results highlight layer number as a key parameter for optimizing NR device performance. Our thickness-controlled growth strategy provides a general route towards TMD NR-based transistors with enhanced scalability and performance.
ER  -