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PreprintCC BY 4.0arXiv

Electrostatic Charge Model for Dual-Layer Oxide Thin-Film Transistors

  • Måns J. Mattsson
  • John F. Wager
  • Matt W. Graham
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Abstract

A simple electrostatic two-equation model for dual-layer thin-film transistor (TFT) operation is developed. The model distributes electrostatic charge between the top and bottom semiconductor layers, and the resulting transfer and mobility curves accurately simulate experimental dual-layer a-IGZO/a-IZO TFT operation. The model further provides an analytic expression that maps charge confinement in the high-mobility a-IZO bottom semiconductor layer with the a-IGZO top-layer thickness and the conduction-band offset. By considering both a-IGZO/a-IZO layer charge partition and competing thickness-dependent oxygen vacancy trap density effects, the model suggests an optimal a-IGZO layer thickness of 9 to 12 nm. Importantly, this general electrostatic model extends to most dual-layer TFT systems and calculates how the top semiconductor layer TFT turn-on voltage changes sharply with the conduction band offset and layer thickness.

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Cite

BibTeXRIS
BibTeX
@misc{mattsson2026electrostatic,
  title = {{Electrostatic Charge Model for Dual-Layer Oxide Thin-Film Transistors}},
  author = {Måns J. Mattsson and John F. Wager and Matt W. Graham},
  howpublished = {arXiv},
  year = {2026},
  month = jun,
  doi = {10.48550/arxiv.2606.13765},
  eprint = {2606.13765},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2606.13765},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Electrostatic Charge Model for Dual-Layer Oxide Thin-Film Transistors
AU  - Måns J. Mattsson
AU  - John F. Wager
AU  - Matt W. Graham
PY  - 2026
DA  - 2026/06/11
PB  - arXiv
DO  - 10.48550/arxiv.2606.13765
UR  - https://arxiv.org/abs/2606.13765
AB  - A simple electrostatic two-equation model for dual-layer thin-film transistor (TFT) operation is developed. The model distributes electrostatic charge between the top and bottom semiconductor layers, and the resulting transfer and mobility curves accurately simulate experimental dual-layer a-IGZO/a-IZO TFT operation. The model further provides an analytic expression that maps charge confinement in the high-mobility a-IZO bottom semiconductor layer with the a-IGZO top-layer thickness and the conduction-band offset. By considering both a-IGZO/a-IZO layer charge partition and competing thickness-dependent oxygen vacancy trap density effects, the model suggests an optimal a-IGZO layer thickness of 9 to 12 nm. Importantly, this general electrostatic model extends to most dual-layer TFT systems and calculates how the top semiconductor layer TFT turn-on voltage changes sharply with the conduction band offset and layer thickness.
ER  -