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HVPE Homoepitaxy of β-Ga2O3: High-Temperature Growth and Orientation-Dependent Surface Evolution

  • Sourav Sarker
  • Saleh Ahmed Khan
  • Ahmed Ibreljic
  • Pronoy Kanti Das
  • Anhar Bhuiyan
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Abstract

In this work, we systematically investigate homoepitaxial β-Ga2O3 growth by halide vapor phase epitaxy (HVPE) on (010), (001), and (2̅01) native substrates over a broad growth parameter space, extending the growth temperature as high as 1150 ∘C. The growth kinetics exhibit strong dependence on precursor supply, temperature, reactor pressure, and Ga-source-to-substrate distance. Increasing the HCl flow from 80 to 300 sccm enhances the growth rate by up to seven-fold, while increasing the temperature from 1050 to 1150 ∘C nearly doubles the deposition rate. At 1150 ∘C, atmospheric-pressure growth yields rates more than 2.5 times higher than those at 100 Torr, while reducing the O2 flow to 5 sccm further increases the growth rate to 14.3 μm/h, producing films up to 42.9 μm thick in 3 h. Notably, phase-pure homoepitaxial layers with good crystalline quality are obtained across all three orientations, with low rocking-curve full width at half maximum (FWHM) values of 63.4, 66.6, and 42.8 arcsec for the (010), (001), and (2̅01) epilayers, respectively. The surface morphology exhibits a pronounced crystallographic dependence and evolves strongly with the HVPE growth conditions. In particular, the (2̅01) surface develops well-defined step-and-terrace morphology with local RMS roughness as low as 0.17 nm. These results extend β-Ga2O3 HVPE homoepitaxy into a higher-temperature regime and demonstrate a broad process window for high-rate growth of thick, high-quality epilayers with strongly orientation-dependent surface evolution.

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Cite

BibTeXRIS
BibTeX
@misc{sarker2026hvpe,
  title = {{HVPE Homoepitaxy of $β$-Ga$_2$O$_3$: High-Temperature Growth and Orientation-Dependent Surface Evolution}},
  author = {Sourav Sarker and Saleh Ahmed Khan and Ahmed Ibreljic and Pronoy Kanti Das and Anhar Bhuiyan},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.01003},
  eprint = {2610.01003},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.01003},
}
RIS
TY  - UNPB
TI  - HVPE Homoepitaxy of β-Ga_2O_3: High-Temperature Growth and Orientation-Dependent Surface Evolution
AU  - Sourav Sarker
AU  - Saleh Ahmed Khan
AU  - Ahmed Ibreljic
AU  - Pronoy Kanti Das
AU  - Anhar Bhuiyan
PY  - 2026
DA  - 2026/10/01
PB  - arXiv
DO  - 10.48550/arxiv.2610.01003
UR  - https://arxiv.org/abs/2610.01003
AB  - In this work, we systematically investigate homoepitaxial β-Ga_2O_3 growth by halide vapor phase epitaxy (HVPE) on (010), (001), and (2̅01) native substrates over a broad growth parameter space, extending the growth temperature as high as 1150 ^∘C. The growth kinetics exhibit strong dependence on precursor supply, temperature, reactor pressure, and Ga-source-to-substrate distance. Increasing the HCl flow from 80 to 300 sccm enhances the growth rate by up to seven-fold, while increasing the temperature from 1050 to 1150 ^∘C nearly doubles the deposition rate. At 1150 ^∘C, atmospheric-pressure growth yields rates more than 2.5 times higher than those at 100 Torr, while reducing the O_2 flow to 5 sccm further increases the growth rate to 14.3 μm/h, producing films up to 42.9 μm thick in 3 h. Notably, phase-pure homoepitaxial layers with good crystalline quality are obtained across all three orientations, with low rocking-curve full width at half maximum (FWHM) values of 63.4, 66.6, and 42.8 arcsec for the (010), (001), and (2̅01) epilayers, respectively. The surface morphology exhibits a pronounced crystallographic dependence and evolves strongly with the HVPE growth conditions. In particular, the (2̅01) surface develops well-defined step-and-terrace morphology with local RMS roughness as low as 0.17 nm. These results extend β-Ga_2O_3 HVPE homoepitaxy into a higher-temperature regime and demonstrate a broad process window for high-rate growth of thick, high-quality epilayers with strongly orientation-dependent surface evolution.
ER  -