Optimization of RF Sputtering Power for High-Performance ITZO Thin-Film Transistors: Correlation Between Film Properties, Oxygen Defects and Electrical Performance
4 affiliations
- 1Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, Changchun 130118, China
- 2School of Electrical and Computer Science, Jilin Jianzhu University, Changchun 130118, China
- 3Department of Chemistry, Jilin Normal University, Siping 136000, China
- 4Electron Microscopy Center, Jilin University, Changchun 130012, China
Abstract
This study investigates the optimization of RF sputtering power for high-performance ITZO TFTs by correlating the film physicochemical properties, oxygen-related defects, and device characteristics. The films were used as the channel layer in thin-film transistors (TFTs). XRD, UV–Vis spectroscopy, and XPS were systematically used to investigate the effects of sputtering power on the film structure, optical properties, chemical composition, and electrical performance of the devices. The results show that X-ray diffraction (XRD) analysis revealed that the ITZO films prepared at different sputtering powers were predominantly amorphous in structure. UV–Vis measurements indicated that the ITZO films maintained a high optical transmittance (>85%), demonstrating their strong potential for application in transparent electronic devices. X-ray photoelectron spectroscopy (XPS) analysis further showed that the sputtering power affected the chemical states of In, Sn, Zn, and O elements, as well as the concentration of oxygen vacancies in the films. Appropriately increasing the sputtering power was found to help regulate the carrier concentration and defect states of the films. When the sputtering power was 70 W, the ITZO TFT exhibited superior electrical performance, with a saturation mobility of 8.46 cm2·V−1·s−1, a threshold voltage of 1.86 V, a subthreshold swing of 0.29 V/decade, and an on/off current ratio of 4.50 × 109.
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BibTeX
@article{peng2026optimization,
title = {{Optimization of RF Sputtering Power for High-Performance ITZO Thin-Film Transistors: Correlation Between Film Properties, Oxygen Defects and Electrical Performance}},
author = {Faxin Peng and Xiaotian Yang and Siming Qiao and Wenhao Ma and Xinyuan Zhang and Jie Wu and Haiyang Zhao and Longyu Guo and Xuefeng Chu},
journal = {Inorganics},
year = {2026},
month = oct,
doi = {10.3390/inorganics14110272},
url = {https://www.mdpi.com/2304-6740/14/11/272},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Optimization of RF Sputtering Power for High-Performance ITZO Thin-Film Transistors: Correlation Between Film Properties, Oxygen Defects and Electrical Performance
AU - Faxin Peng
AU - Xiaotian Yang
AU - Siming Qiao
AU - Wenhao Ma
AU - Xinyuan Zhang
AU - Jie Wu
AU - Haiyang Zhao
AU - Longyu Guo
AU - Xuefeng Chu
PY - 2026
DA - 2026/10/25
JO - Inorganics
DO - 10.3390/inorganics14110272
UR - https://www.mdpi.com/2304-6740/14/11/272
AB - This study investigates the optimization of RF sputtering power for high-performance ITZO TFTs by correlating the film physicochemical properties, oxygen-related defects, and device characteristics. The films were used as the channel layer in thin-film transistors (TFTs). XRD, UV–Vis spectroscopy, and XPS were systematically used to investigate the effects of sputtering power on the film structure, optical properties, chemical composition, and electrical performance of the devices. The results show that X-ray diffraction (XRD) analysis revealed that the ITZO films prepared at different sputtering powers were predominantly amorphous in structure. UV–Vis measurements indicated that the ITZO films maintained a high optical transmittance (>85%), demonstrating their strong potential for application in transparent electronic devices. X-ray photoelectron spectroscopy (XPS) analysis further showed that the sputtering power affected the chemical states of In, Sn, Zn, and O elements, as well as the concentration of oxygen vacancies in the films. Appropriately increasing the sputtering power was found to help regulate the carrier concentration and defect states of the films. When the sputtering power was 70 W, the ITZO TFT exhibited superior electrical performance, with a saturation mobility of 8.46 cm2·V−1·s−1, a threshold voltage of 1.86 V, a subthreshold swing of 0.29 V/decade, and an on/off current ratio of 4.50 × 109.
SN - 2304-6740
ER -