PreprintCC BY 4.0arXiv
Capacitance of Undoped Thin-Film Diodes
Abstract
The capacitance of thin-film diodes based on undoped semiconductors are dominated by injected charge carriers rather than doping-induced carriers. However, an analytical framework of the capacitance in these devices has remained elusive. Here, we derive an analytical description of the capacitance, fully accounting for injected charge carrier and electrode charge effects. Based on these findings, a method to extract the built-in voltage in these devices is presented. The theoretical framework is substantiated numerically by drift-diffusion simulations and experimentally on organic solar cells.
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BibTeX
@misc{sandberg2026capacitance,
title = {{Capacitance of Undoped Thin-Film Diodes}},
author = {Oskar J. Sandberg and Mathias Nyman and Stefan Zeiske and Staffan Dahlstrom and Johannes Benduhn and Ardalan Armin},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.08047},
eprint = {2609.08047},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.08047},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Capacitance of Undoped Thin-Film Diodes
AU - Oskar J. Sandberg
AU - Mathias Nyman
AU - Stefan Zeiske
AU - Staffan Dahlstrom
AU - Johannes Benduhn
AU - Ardalan Armin
PY - 2026
DA - 2026/09/07
PB - arXiv
DO - 10.48550/arxiv.2609.08047
UR - https://arxiv.org/abs/2609.08047
AB - The capacitance of thin-film diodes based on undoped semiconductors are dominated by injected charge carriers rather than doping-induced carriers. However, an analytical framework of the capacitance in these devices has remained elusive. Here, we derive an analytical description of the capacitance, fully accounting for injected charge carrier and electrode charge effects. Based on these findings, a method to extract the built-in voltage in these devices is presented. The theoretical framework is substantiated numerically by drift-diffusion simulations and experimentally on organic solar cells.
ER -