Phase-selective growth of GaS films by chemical vapor deposition
- 1Institute of Nanotechnology, Italian National Council of Research, CNR Via Orabona, 4 70126 Bari Italy
- 2Institute of Chemistry of Condensed Matter and of Technologies for Energy, CNR-ICMATE Corso Stati Uniti 4 Padova Italy
Abstract
Gallium sulfide (GaS) is a layered semiconductor that exhibits polymorphism, making the controlled synthesis of specific crystalline phases essential for tailoring properties and potential applications. In this work, we develop a phase-selective chemical vapor deposition (CVD) strategy for controlling the polymorphism and growth mode of GaS thin films using Ga2S3 as a single precursor and pure H2 as the carrier gas. The effects of pressure, flux, temperature, and growth rate on the phase, crystallinity, and morphology are systematically investigated by Raman spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM). By controlling the growth conditions, the GaS films are selectively tuned from the 2H to the 3R phase, and their growth mode from island-like to a layer-by-layer. Highly crystalline and uniform 3R GaS films are obtained at 100 mbar, 50 sccm, and 550 °C, with a growth rate of approximately 10 nm min−1. Different experimental conditions result in a more island-growth mode and worsening of structural and morphological properties. We also discuss the synergetic effects of H2 in the improvement of the precursor reduction and the film stoichiometry allowing the deposition of 3R films with a high uniform coverage of ∼3 cm2. 2H GaS films are deposited at pressure < 3 mbar and growth rate < 2.5 nm min−1. These results establish a direct process–structure relationship for phase-selective GaS growth and provide a scalable route to centimeter-scale 3R GaS films.
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BibTeX
@article{dicorato2026phaseselective,
title = {{Phase-selective growth of GaS films by chemical vapor deposition}},
author = {Stefano Dicorato and Maria Losurdo and Fabio Palumbo and Maria M. Giangregorio},
journal = {Nanoscale Advances},
year = {2026},
month = sep,
doi = {10.1039/d6na00710d},
url = {https://doi.org/10.1039/d6na00710d},
note = {CC BY-NC 3.0},
}
RIS
TY - JOUR
TI - Phase-selective growth of GaS films by chemical vapor deposition
AU - Stefano Dicorato
AU - Maria Losurdo
AU - Fabio Palumbo
AU - Maria M. Giangregorio
PY - 2026
DA - 2026/09/14
JO - Nanoscale Advances
DO - 10.1039/d6na00710d
UR - https://doi.org/10.1039/d6na00710d
AB - Gallium sulfide (GaS) is a layered semiconductor that exhibits polymorphism, making the controlled synthesis of specific crystalline phases essential for tailoring properties and potential applications. In this work, we develop a phase-selective chemical vapor deposition (CVD) strategy for controlling the polymorphism and growth mode of GaS thin films using Ga2S3 as a single precursor and pure H2 as the carrier gas. The effects of pressure, flux, temperature, and growth rate on the phase, crystallinity, and morphology are systematically investigated by Raman spectroscopy, scanning electron microscopy (SEM), and atomic force microscopy (AFM). By controlling the growth conditions, the GaS films are selectively tuned from the 2H to the 3R phase, and their growth mode from island-like to a layer-by-layer. Highly crystalline and uniform 3R GaS films are obtained at 100 mbar, 50 sccm, and 550 °C, with a growth rate of approximately 10 nm min−1. Different experimental conditions result in a more island-growth mode and worsening of structural and morphological properties. We also discuss the synergetic effects of H2 in the improvement of the precursor reduction and the film stoichiometry allowing the deposition of 3R films with a high uniform coverage of ∼3 cm2. 2H GaS films are deposited at pressure < 3 mbar and growth rate < 2.5 nm min−1. These results establish a direct process–structure relationship for phase-selective GaS growth and provide a scalable route to centimeter-scale 3R GaS films.
SN - 2516-0230
ER -