Post-deposition control of the defect landscape in CdIn2S4 thin films
Abstract
We investigate the effect of post-deposition annealing on the defect-controlled electronic response of CdIn2S4 thin films using photocurrent-light-intensity analysis and transient photoconductivity. Relative to our previous annealing study, the present work extracts characteristic energy scales of the effective sub-bandgap states sampled under illumination and relates them to annealing-induced Fermi-level shifts. The determined characteristic energies are in the range of 40-16 meV and systematically evolve as a result of annealing. The measured Lux-Ampere characteristics evolve systematically from linear to sublinear behavior and, within the Rose and Bube formalisms, are consistent with reorganization of inversion-related antisite states and sulfur-vacancy-related defects. In the as-grown and vacuum-annealed films, the results support a distributed contribution of E states. Because the accessible energy window is limited by illumination range and Fermi-level position, the reconstructed profiles are interpreted as effective rather than absolute state distributions. These results refine the defect-state model of CdIn2S4 and clarify how annealing modifies trapping and recombination pathways.
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BibTeX
@article{zdzieblowski2026postdeposition,
title = {{Post-deposition control of the defect landscape in CdIn2S4 thin films}},
author = {Jakub Zdziebłowski and Nicolas Barreau and Paweł Zabierowski},
journal = {Physica B: Condensed Matter},
year = {2026},
month = oct,
doi = {10.1016/j.physb.2026.419207},
url = {https://hal.science/hal-05730610v1},
note = {CC BY-NC-ND 4.0},
}
RIS
TY - JOUR
TI - Post-deposition control of the defect landscape in CdIn2S4 thin films
AU - Jakub Zdziebłowski
AU - Nicolas Barreau
AU - Paweł Zabierowski
PY - 2026
DA - 2026/10/08
JO - Physica B: Condensed Matter
DO - 10.1016/j.physb.2026.419207
UR - https://hal.science/hal-05730610v1
AB - We investigate the effect of post-deposition annealing on the defect-controlled electronic response of CdIn2S4 thin films using photocurrent-light-intensity analysis and transient photoconductivity. Relative to our previous annealing study, the present work extracts characteristic energy scales of the effective sub-bandgap states sampled under illumination and relates them to annealing-induced Fermi-level shifts. The determined characteristic energies are in the range of 40-16 meV and systematically evolve as a result of annealing. The measured Lux-Ampere characteristics evolve systematically from linear to sublinear behavior and, within the Rose and Bube formalisms, are consistent with reorganization of inversion-related antisite states and sulfur-vacancy-related defects. In the as-grown and vacuum-annealed films, the results support a distributed contribution of E states. Because the accessible energy window is limited by illumination range and Fermi-level position, the reconstructed profiles are interpreted as effective rather than absolute state distributions. These results refine the defect-state model of CdIn2S4 and clarify how annealing modifies trapping and recombination pathways.
SN - 0921-4526
SN - 1873-2135
ER -