Metallic-Phase-Fe3GaTe2 Enabled Interface Engineering for Self-Powered and High-Gain WS2 Photodetectors
Abstract
Two-dimensional transition-metal dichalcogenides offer strong light-matter interaction but suffer from inefficient carrier separation and contact-related losses in photodetectors. Here, we demonstrate a high-gain WS2/Fe3GaTe2 van der Waals heterostructure photodetector, where metallic Fe3GaTe2 serves as an active interfacial contact. The work-function mismatch, together with interfacial charge redistribution and asymmetric contact geometry, contributes to a built-in field that supports self-powered photodetection at zero bias. Under 450 nm illumination, the device delivers a zero-bias responsivity of 23.5 A/W and an apparent external quantum efficiency of 6.4 x 103%. At -1 V biasing, the heterostructure exhibits photoresponse at 450, 520 and 633 nm, achieving a responsivity of 9.7 x 103 A/W and a noise derived specific detectivity of 2.3 x 1013 Jones at 100 Hz under 450 nm illumination. The high photoresponse is attributed to interfacial carrier separation, efficient extraction, and a likely contribution from trap-assisted photogating in multilayer WS2. These results establish Fe3GaTe2-enabled interface engineering as an effective route for self-powered, highly sensitive 2D photodetectors.
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BibTeX
@misc{ali2026metallicphasefe3gate2,
title = {{Metallic-Phase-Fe$_3$GaTe$_2$ Enabled Interface Engineering for Self-Powered and High-Gain WS$_2$ Photodetectors}},
author = {Wajid Ali and Ming Huang and Juan Li and Jianhua Huang and Liuli Yang and Sajid Ur Rehman and Chinmay K. Mohanty and Zahir Muhammad and Ziwei Li and Maciej R. Molas},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.07295},
eprint = {2609.07295},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.07295},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Metallic-Phase-Fe_3GaTe_2 Enabled Interface Engineering for Self-Powered and High-Gain WS_2 Photodetectors
AU - Wajid Ali
AU - Ming Huang
AU - Juan Li
AU - Jianhua Huang
AU - Liuli Yang
AU - Sajid Ur Rehman
AU - Chinmay K. Mohanty
AU - Zahir Muhammad
AU - Ziwei Li
AU - Maciej R. Molas
PY - 2026
DA - 2026/09/07
PB - arXiv
DO - 10.48550/arxiv.2609.07295
UR - https://arxiv.org/abs/2609.07295
AB - Two-dimensional transition-metal dichalcogenides offer strong light-matter interaction but suffer from inefficient carrier separation and contact-related losses in photodetectors. Here, we demonstrate a high-gain WS_2/Fe_3GaTe_2 van der Waals heterostructure photodetector, where metallic Fe_3GaTe_2 serves as an active interfacial contact. The work-function mismatch, together with interfacial charge redistribution and asymmetric contact geometry, contributes to a built-in field that supports self-powered photodetection at zero bias. Under 450 nm illumination, the device delivers a zero-bias responsivity of 23.5 A/W and an apparent external quantum efficiency of 6.4 x 10^3%. At -1 V biasing, the heterostructure exhibits photoresponse at 450, 520 and 633 nm, achieving a responsivity of 9.7 x 10^3 A/W and a noise derived specific detectivity of 2.3 x 10^13 Jones at 100 Hz under 450 nm illumination. The high photoresponse is attributed to interfacial carrier separation, efficient extraction, and a likely contribution from trap-assisted photogating in multilayer WS_2. These results establish Fe_3GaTe_2-enabled interface engineering as an effective route for self-powered, highly sensitive 2D photodetectors.
ER -