Atomic layer deposition of germanium using a germanium(II) triazenide precursor and plasma electrons
Abstract
Germanium (Ge) thin films were deposited by electron chemical vapor deposition (e-CVD) using bis(1,3-di-tert-butyltriazenide)germanium(II), Ge(triaz)2, and plasma electrons. Separating the Ge(triaz)2 pulse and electron exposure into sequential steps affords a controllable cyclic deposition process in which both precursor adsorption and electron exposure exhibited the self-limiting behavior characteristic of atomic layer deposition (ALD) process. 50 deposition cycles resulted in a continuous film with a thickness of 16 nm. The films were oxidized after exposure to air and low concentrations of carbon and nitrogen impurities were detected after Ar+ etching. The plasma decomposition of Ge(triaz)2 is found to render dinitrogen and volatile hydrocarbon fragments, explaining the low impurity levels of the deposited films.
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BibTeX
@misc{tabrizi2026atomic,
title = {{Atomic layer deposition of germanium using a germanium(II) triazenide precursor and plasma electrons}},
author = {Peggy Bagherzadeh Tabrizi and Nathan J. O'Brien and Alaa Malekshahineia and Robert Boyd and Grzegorz Greczynski and Daniel Lundin and Henrik Pedersen},
howpublished = {ChemRxiv},
year = {2026},
month = oct,
doi = {10.26434/chemrxiv.15010383/v1},
url = {https://chemrxiv.org/doi/full/10.26434/chemrxiv.15010383/v1},
note = {CC BY},
}
RIS
TY - UNPB
TI - Atomic layer deposition of germanium using a germanium(II) triazenide precursor and plasma electrons
AU - Peggy Bagherzadeh Tabrizi
AU - Nathan J. O'Brien
AU - Alaa Malekshahineia
AU - Robert Boyd
AU - Grzegorz Greczynski
AU - Daniel Lundin
AU - Henrik Pedersen
PY - 2026
DA - 2026/10/13
PB - ChemRxiv
DO - 10.26434/chemrxiv.15010383/v1
UR - https://chemrxiv.org/doi/full/10.26434/chemrxiv.15010383/v1
AB - Germanium (Ge) thin films were deposited by electron chemical vapor deposition (e-CVD) using bis(1,3-di-tert-butyltriazenide)germanium(II), Ge(triaz)2, and plasma electrons. Separating the Ge(triaz)2 pulse and electron exposure into sequential steps affords a controllable cyclic deposition process in which both precursor adsorption and electron exposure exhibited the self-limiting behavior characteristic of atomic layer deposition (ALD) process. 50 deposition cycles resulted in a continuous film with a thickness of 16 nm. The films were oxidized after exposure to air and low concentrations of carbon and nitrogen impurities were detected after Ar+ etching. The plasma decomposition of Ge(triaz)2 is found to render dinitrogen and volatile hydrocarbon fragments, explaining the low impurity levels of the deposited films.
ER -