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Fast-Neutron Irradiation Effect in Heteroepitaxial β-Ga2O3 Schottky Diodes Fabricated on Low-Cost Sapphire Substrates

  • Saleh Ahmed Khan
  • Ahmed Ibreljic
  • Sourav Sarker
  • Stephen Margiotta
  • Anhar Bhuiyan
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Abstract

In this work, we investigate the response of Ni/β-Ga2O3 Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of 1×1015 n·cm−2. The LPCVD-grown heteroepitaxial structure consists of an unintentionally doped buffer, an n+ contact layer, and an n-type drift layer, with mesa isolation realized by plasma-free Ga-assisted LPCVD etching. Prior to irradiation, the devices exhibit a turn-on voltage of 1.20 V, specific on-resistance of 8.43 mΩ·cm2, ideality factor of 1.32, and Schottky barrier height of 1.29 eV. Following irradiation, the devices remain operational, although the forward current decreases, the turn-on voltage increases to 2.40 V, and the barrier height increases to 1.34 eV. Capacitance-voltage measurements reveal a ∼50% reduction in net donor concentration, corresponding to a carrier-removal rate of ∼105 cm−1. Temperature-dependent measurements from 25 to 250 ∘C confirm that thermionic emission remains the dominant transport mechanism and show significant suppression of reverse leakage current after irradiation. The breakdown voltage increases from 101 to 135 V, consistent with neutron-induced donor compensation. TCAD simulations show a more uniform electric-field distribution and reduced field crowding at the Schottky edge after irradiation. These results provide insight into neutron-induced donor compensation in heteroepitaxial β-Ga2O3 and demonstrate the ability of LPCVD-grown β-Ga2O3 Schottky diodes on sapphire to maintain stable operation under high-fluence neutron environments relevant to space and nuclear electronics.

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Cite

BibTeXRIS
BibTeX
@misc{khan2026fastneutron,
  title = {{Fast-Neutron Irradiation Effect in Heteroepitaxial $β$-Ga$_2$O$_3$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates}},
  author = {Saleh Ahmed Khan and Ahmed Ibreljic and Sourav Sarker and Stephen Margiotta and Anhar Bhuiyan},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2606.10269},
  eprint = {2606.10269},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2606.10269},
}
RIS
TY  - UNPB
TI  - Fast-Neutron Irradiation Effect in Heteroepitaxial β-Ga_2O_3 Schottky Diodes Fabricated on Low-Cost Sapphire Substrates
AU  - Saleh Ahmed Khan
AU  - Ahmed Ibreljic
AU  - Sourav Sarker
AU  - Stephen Margiotta
AU  - Anhar Bhuiyan
PY  - 2026
DA  - 2026/09/17
PB  - arXiv
DO  - 10.48550/arxiv.2606.10269
UR  - https://arxiv.org/abs/2606.10269
AB  - In this work, we investigate the response of Ni/β-Ga_2O_3 Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of 1×10^15 n·cm^−2. The LPCVD-grown heteroepitaxial structure consists of an unintentionally doped buffer, an n^+ contact layer, and an n-type drift layer, with mesa isolation realized by plasma-free Ga-assisted LPCVD etching. Prior to irradiation, the devices exhibit a turn-on voltage of 1.20 V, specific on-resistance of 8.43 mΩ·cm^2, ideality factor of 1.32, and Schottky barrier height of 1.29 eV. Following irradiation, the devices remain operational, although the forward current decreases, the turn-on voltage increases to 2.40 V, and the barrier height increases to 1.34 eV. Capacitance-voltage measurements reveal a ∼50% reduction in net donor concentration, corresponding to a carrier-removal rate of ∼105 cm^−1. Temperature-dependent measurements from 25 to 250 ^∘C confirm that thermionic emission remains the dominant transport mechanism and show significant suppression of reverse leakage current after irradiation. The breakdown voltage increases from 101 to 135 V, consistent with neutron-induced donor compensation. TCAD simulations show a more uniform electric-field distribution and reduced field crowding at the Schottky edge after irradiation. These results provide insight into neutron-induced donor compensation in heteroepitaxial β-Ga_2O_3 and demonstrate the ability of LPCVD-grown β-Ga_2O_3 Schottky diodes on sapphire to maintain stable operation under high-fluence neutron environments relevant to space and nuclear electronics.
ER  -