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PreprintCC BY 4.0arXiv

Cryogenic Voltage Control of Magnetism in Silicon-Integrated \newline SrTiO3/Fe Heterostructures

  • Stijn Reniers
  • Emile Fourneau
  • Andries Boelen
  • Xing-Jian Liu
  • Ekaterina Gorokh
  • Lukas Nulens
  • Vivek Kumar
  • Luca Ceccon
  • Christian Haffner
  • Clement Merckling
  • Jun-Yi Ge
  • Bertrand Dupé
3 more authors
  • Alejandro V. Silhanek
  • Kristiaan Temst
  • Joris Van de Vondel
Open at sourcePDFDOICite

Abstract

Cryogenic electronics forms a rapidly emerging research domain for high-performance and power-efficient computing applications. Incorporating nanomagnetic components in cryogenic circuitry adds highly valuable functionality, facilitating downscaling, reducing energy consumption and introducing time-reversal symmetry breaking. Furthermore, low-temperature environments enhance magnetic stability and switching efficiency at nanoscale dimensions, reinforcing the potential of cryogenic nanomagnets. To fully leverage these opportunities, magnetic control schemes require alternative options to current-based writing, which is the main bottleneck regarding power consumption and downscaling. In this regard, voltage-based gating of the magnetic state could drastically enhance operational efficiency and integration density. In this work, we investigate cryogenic Voltage Control of Magnetism (VCM) in epitaxial SrTiO3/Fe thin film heterostructures on a CMOS compatible Si substrate. We demonstrate and quantify voltage-controlled modifications of the magnetic domain structure, consistent with electric field-controlled magnetic anisotropy at the Fe/SrTiO3 interface. These findings provide a viable material system for the development of next-generation magnetic domain-based devices for classical and quantum computing.

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Cite

BibTeXRIS
BibTeX
@misc{reniers2026cryogenic,
  title = {{Cryogenic Voltage Control of Magnetism in Silicon-Integrated \newline SrTiO$_3$/Fe Heterostructures}},
  author = {Stijn Reniers and Emile Fourneau and Andries Boelen and Xing-Jian Liu and Ekaterina Gorokh and Lukas Nulens and Vivek Kumar and Luca Ceccon and Christian Haffner and Clement Merckling and Jun-Yi Ge and Bertrand Dupé and Alejandro V. Silhanek and Kristiaan Temst and Joris Van de Vondel},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2609.25851},
  eprint = {2609.25851},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2609.25851},
  note = {CC BY 4.0},
}
RIS
TY  - UNPB
TI  - Cryogenic Voltage Control of Magnetism in Silicon-Integrated \newline SrTiO_3/Fe Heterostructures
AU  - Stijn Reniers
AU  - Emile Fourneau
AU  - Andries Boelen
AU  - Xing-Jian Liu
AU  - Ekaterina Gorokh
AU  - Lukas Nulens
AU  - Vivek Kumar
AU  - Luca Ceccon
AU  - Christian Haffner
AU  - Clement Merckling
AU  - Jun-Yi Ge
AU  - Bertrand Dupé
AU  - Alejandro V. Silhanek
AU  - Kristiaan Temst
AU  - Joris Van de Vondel
PY  - 2026
DA  - 2026/09/22
PB  - arXiv
DO  - 10.48550/arxiv.2609.25851
UR  - https://arxiv.org/abs/2609.25851
AB  - Cryogenic electronics forms a rapidly emerging research domain for high-performance and power-efficient computing applications. Incorporating nanomagnetic components in cryogenic circuitry adds highly valuable functionality, facilitating downscaling, reducing energy consumption and introducing time-reversal symmetry breaking. Furthermore, low-temperature environments enhance magnetic stability and switching efficiency at nanoscale dimensions, reinforcing the potential of cryogenic nanomagnets. To fully leverage these opportunities, magnetic control schemes require alternative options to current-based writing, which is the main bottleneck regarding power consumption and downscaling. In this regard, voltage-based gating of the magnetic state could drastically enhance operational efficiency and integration density. In this work, we investigate cryogenic Voltage Control of Magnetism (VCM) in epitaxial SrTiO_3/Fe thin film heterostructures on a CMOS compatible Si substrate. We demonstrate and quantify voltage-controlled modifications of the magnetic domain structure, consistent with electric field-controlled magnetic anisotropy at the Fe/SrTiO_3 interface. These findings provide a viable material system for the development of next-generation magnetic domain-based devices for classical and quantum computing.
ER  -