Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. VII. Step kinetics
Abstract
Ab initio calculations were used to simulate the kinetics of attachment of new segments of the crystalline lattice (pyramids) at steps on the nonmetal-terminated surface of tetrahedral semiconductors: GaN, GaP, GaAs and GaSb. These surfaces are wurtzite gallium nitride, i.e. GaN(000-1) surface, zinc blende gallium phosphide, i.e. GaP(-1-1-1) gallium arsenide, GaAs(-1-1-1) and gallium antimonide GaSb(-1-1-1) surfaces. Diffusion species are gallium adatoms at high coverage or gallium adatoms connected with nonmetal atom creating stable pyramids. These pyramids arrive at the steps, and cannot be attached be directly because the Ga adatom at the pyramid base cannot be attached directly. Therefore they are incorporated into the step by additional nonmetal atoms glue atoms arriving from the vapor or detached from other segments of the surface terraces.
Related
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BibTeX
@misc{strak2026universal,
title = {{Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. VII. Step kinetics}},
author = {Pawel Strak and Stanisław Krukowski},
howpublished = {arXiv},
year = {2026},
month = nov,
doi = {10.48550/arxiv.2611.02735},
eprint = {2611.02735},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2611.02735},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. VII. Step kinetics
AU - Pawel Strak
AU - Stanisław Krukowski
PY - 2026
DA - 2026/11/02
PB - arXiv
DO - 10.48550/arxiv.2611.02735
UR - https://arxiv.org/abs/2611.02735
AB - Ab initio calculations were used to simulate the kinetics of attachment of new segments of the crystalline lattice (pyramids) at steps on the nonmetal-terminated surface of tetrahedral semiconductors: GaN, GaP, GaAs and GaSb. These surfaces are wurtzite gallium nitride, i.e. GaN(000-1) surface, zinc blende gallium phosphide, i.e. GaP(-1-1-1) gallium arsenide, GaAs(-1-1-1) and gallium antimonide GaSb(-1-1-1) surfaces. Diffusion species are gallium adatoms at high coverage or gallium adatoms connected with nonmetal atom creating stable pyramids. These pyramids arrive at the steps, and cannot be attached be directly because the Ga adatom at the pyramid base cannot be attached directly. Therefore they are incorporated into the step by additional nonmetal atoms glue atoms arriving from the vapor or detached from other segments of the surface terraces.
ER -