InGaAs/InAlAs Avalanche Photodiodes: Recent Advances in Growth, Device Structure, Noise Performance, and Emerging Applications
- 1Department of Electrical and Electronic Engineering
- 2Ahsanullah University of Science and Technology
Abstract
Inthisstudy,wereviewrecentadvancesin InGaAs/InAlAs avalanche photodiodes (APDs), which remain anestablishedandwidelyusednear-infrareddetection technology for optical-fiber communication, light detection and ranging (lidar), and single-photon quantum applications. This paper reviews recent progress in the epitaxial growth, device structure,andperformanceoptimizationofInGaAs/InAlAs APDs,withemphasisonmetalorganicchemicalvapor deposition(MOCVD)andmolecularbeamepitaxy(MBE) growthconsiderations,separateabsorption,grading,charge, and multiplication (SAGCM) device architectures, doping and gain-stage engineering for excess-noise reduction, and emerging directions including single-photon avalanche diodes (SPADs) for quantum key distribution, focal-plane array receivers for lidar, andmechanicallyflexibledetectorplatforms.Comparative performance againstalternativemultiplication-layermaterial systems is also discussed. This review highlights the trade-offs between thematurityoftheInGaAs/InAlAs system and the lowerexcessnoisedemonstratedbyantimonide-based alternatives,whileidentifyingopenchallengesinnoise suppression, thermal stability, and large-scale array integration for continued development of this device family.
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BibTeX
@misc{shomyo2026ingaasinalas,
title = {{InGaAs/InAlAs Avalanche Photodiodes: Recent Advances in Growth, Device Structure, Noise Performance, and Emerging Applications}},
author = {Md. Safin Mahmood Shomyo},
howpublished = {ChemRxiv},
year = {2026},
month = sep,
doi = {10.26434/chemrxiv.15008516/v1},
url = {https://chemrxiv.org/doi/full/10.26434/chemrxiv.15008516/v1},
note = {CC BY-NC-ND},
}
RIS
TY - UNPB
TI - InGaAs/InAlAs Avalanche Photodiodes: Recent Advances in Growth, Device Structure, Noise Performance, and Emerging Applications
AU - Md. Safin Mahmood Shomyo
PY - 2026
DA - 2026/09/08
PB - ChemRxiv
DO - 10.26434/chemrxiv.15008516/v1
UR - https://chemrxiv.org/doi/full/10.26434/chemrxiv.15008516/v1
AB - Inthisstudy,wereviewrecentadvancesin InGaAs/InAlAs avalanche photodiodes (APDs), which remain anestablishedandwidelyusednear-infrareddetection technology for optical-fiber communication, light detection and ranging (lidar), and single-photon quantum applications. This paper reviews recent progress in the epitaxial growth, device structure,andperformanceoptimizationofInGaAs/InAlAs APDs,withemphasisonmetalorganicchemicalvapor deposition(MOCVD)andmolecularbeamepitaxy(MBE) growthconsiderations,separateabsorption,grading,charge, and multiplication (SAGCM) device architectures, doping and gain-stage engineering for excess-noise reduction, and emerging directions including single-photon avalanche diodes (SPADs) for quantum key distribution, focal-plane array receivers for lidar, andmechanicallyflexibledetectorplatforms.Comparative performance againstalternativemultiplication-layermaterial systems is also discussed. This review highlights the trade-offs between thematurityoftheInGaAs/InAlAs system and the lowerexcessnoisedemonstratedbyantimonide-based alternatives,whileidentifyingopenchallengesinnoise suppression, thermal stability, and large-scale array integration for continued development of this device family.
ER -