Crystal Phase Engineering and Light Emission from 4H-SiGe Nanowires
4 affiliations
- 1Eindhoven University of Technology, De Groene Loper 19, Eindhoven 5612 AZ, The Netherlands.
- 2Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, Palaiseau F-91120, France.
- 3CFisUC, Department of Physics, University of Coimbra, Rua Larga, Coimbra 3004-516, Portugal.
- 4Research Center Future Energy Materials and Systems, Interdisciplinary Centre for Advanced Materials Simulation, Faculty of Physics and Astronomy, Ruhr University Bochum, Universitätsstrasse 150, Bochum 44801, Germany.
Abstract
Silicon germanium (SiGe) semiconductors are driving our modern society based on electronic processing devices. However, the inherent indirect bandgap alignment of SiGe prohibits efficient light emission. Crystal phase engineering of SiGe semiconductors allows for direct bandgap hexagonal 2H, 4H, and 6H polytypes. Here, we report the growth of 4H-Ge and 4H-SiGe nanowires with high crystal phase purity. We exploit crystal structure transfer by epitaxial growth of 4H-SiGe nanowires on a 4H-ZnS substrate. Although theory predicts that 4H-Ge exhibits a parity-forbidden fundamental transition, we report direct bandgap light emission from both 4H-Ge and 4H-SiGe nanowires, as well as tunability of the emission wavelength with composition. We find effective recombination lifetimes of 55 and 400 μs for 4H-Ge and 4H-Si 0.2 Ge 0.8 , respectively. We finally observe excellent agreement between ab initio density functional theory and experiment on the bandgap and the radiative lifetimes of the 4H-SiGe alloys.
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BibTeX
@article{farina2026crystal,
title = {{Crystal Phase Engineering and Light Emission from 4H-SiGe Nanowires}},
author = {Riccardo Farina and Hafssa Ameziane and Victor van Lange and Pedro Borlido and Gilles Patriarche and Charles Renard and Erik P A M Bakkers and Silvana Botti and Laetitia Vincent and Jos E M Haverkort},
journal = {ACS Nanoscience Au},
year = {2026},
month = jul,
doi = {10.1021/acsnanoscienceau.6c00062},
url = {https://hal.science/hal-05736307v1},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Crystal Phase Engineering and Light Emission from 4H-SiGe Nanowires
AU - Riccardo Farina
AU - Hafssa Ameziane
AU - Victor van Lange
AU - Pedro Borlido
AU - Gilles Patriarche
AU - Charles Renard
AU - Erik P A M Bakkers
AU - Silvana Botti
AU - Laetitia Vincent
AU - Jos E M Haverkort
PY - 2026
DA - 2026/07/31
JO - ACS Nanoscience Au
DO - 10.1021/acsnanoscienceau.6c00062
UR - https://hal.science/hal-05736307v1
AB - Silicon germanium (SiGe) semiconductors are driving our modern society based on electronic processing devices. However, the inherent indirect bandgap alignment of SiGe prohibits efficient light emission. Crystal phase engineering of SiGe semiconductors allows for direct bandgap hexagonal 2H, 4H, and 6H polytypes. Here, we report the growth of 4H-Ge and 4H-SiGe nanowires with high crystal phase purity. We exploit crystal structure transfer by epitaxial growth of 4H-SiGe nanowires on a 4H-ZnS substrate. Although theory predicts that 4H-Ge exhibits a parity-forbidden fundamental transition, we report direct bandgap light emission from both 4H-Ge and 4H-SiGe nanowires, as well as tunability of the emission wavelength with composition. We find effective recombination lifetimes of 55 and 400 μs for 4H-Ge and 4H-Si 0.2 Ge 0.8 , respectively. We finally observe excellent agreement between ab initio density functional theory and experiment on the bandgap and the radiative lifetimes of the 4H-SiGe alloys.
SN - 2694-2496
ER -