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PreprintCC BY-NC-ND 4.0arXiv

Epitaxial growth of beta-bismuthene on Sb2Te3

  • Giorgia Sementilli
  • Arslan Masood
  • Fabio Ronci
  • Stefano Colonna
  • Marilena Carbone
  • Marco Papagno
  • Ziya S. Aliev
  • Evgueni V. Chulkov
  • Sergey V. Eremeev
  • and Roberto Flammini
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Abstract

Over the past decades, two-dimensional crystals have attracted considerable interest as promising materials for electronic and optoelectronic applications. Among them, graphene analogs composed of heavy atoms occupy a particularly distinctive niche due to their enhanced spin-orbit interaction. Here, we present an epitaxial heterointerface formed by beta-bismuthene on Sb2Te3, a well-known three-dimensional topological insulator. Using scanning tunneling microscopy, we systematically investigated the effects of Bi coverage and substrate temperature on nucleation processes, island morphology, and atomic structure. In addition, substrate-induced defects were identified throughout the bismuthene lattice.

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Cite

BibTeXRIS
BibTeX
@misc{sementilli2026epitaxial,
  title = {{Epitaxial growth of beta-bismuthene on Sb2Te3}},
  author = {Giorgia Sementilli and Arslan Masood and Fabio Ronci and Stefano Colonna and Marilena Carbone and Marco Papagno and Ziya S. Aliev and Evgueni V. Chulkov and Sergey V. Eremeev and and Roberto Flammini},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2605.07700},
  eprint = {2605.07700},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2605.07700},
  note = {CC BY-NC-ND 4.0},
}
RIS
TY  - UNPB
TI  - Epitaxial growth of beta-bismuthene on Sb2Te3
AU  - Giorgia Sementilli
AU  - Arslan Masood
AU  - Fabio Ronci
AU  - Stefano Colonna
AU  - Marilena Carbone
AU  - Marco Papagno
AU  - Ziya S. Aliev
AU  - Evgueni V. Chulkov
AU  - Sergey V. Eremeev
AU  - and Roberto Flammini
PY  - 2026
DA  - 2026/09/22
PB  - arXiv
DO  - 10.48550/arxiv.2605.07700
UR  - https://arxiv.org/abs/2605.07700
AB  - Over the past decades, two-dimensional crystals have attracted considerable interest as promising materials for electronic and optoelectronic applications. Among them, graphene analogs composed of heavy atoms occupy a particularly distinctive niche due to their enhanced spin-orbit interaction. Here, we present an epitaxial heterointerface formed by beta-bismuthene on Sb2Te3, a well-known three-dimensional topological insulator. Using scanning tunneling microscopy, we systematically investigated the effects of Bi coverage and substrate temperature on nucleation processes, island morphology, and atomic structure. In addition, substrate-induced defects were identified throughout the bismuthene lattice.
ER  -