Phenomenological Growth Regimes in Liquid-Precursor CVD of MoS2 on Functional Substrates
Abstract
The integration of two-dimensional transition-metal dichalcogenides (TMDCs) onto functional substrates remains constrained by stochastic vapor-phase growth dynamics. Here, we show that liquid-phase precursor chemical vapor deposition (CVD) of MoS2 introduces growth conditions that are consistent with a substrate-influenced reaction-diffusion process. By utilizing pre-growth spin-coated MoO3 intermediates across a diverse crystalline library (sapphire, SrTiO3, rutile TiO2, MgO, and 6H-SiC), we find that substrate-dependent variations in precursor wetting, surface chemistry, and inferred mass-transport constraints correlate with distinct growth morphologies. These substrate-dependent growth regimes are interpreted in terms of reduced effective lateral growth length on SrTiO3, possible precursor anchoring on TiO2, likely chemical surface restructuring on MgO, and possible step-edge growth on SiC. Raman and photoluminescence spectroscopy reveal substrate-dependent variations in vibrational and optical response that correlate with differences in strain, charge environment, and dielectric screening. Ultimately, this work highlights a substrate-dependent reaction-diffusion framework as a potentially useful route for tuning the structural and optical properties of large-area 2D materials.
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BibTeX
@misc{kharsah2026phenomenological,
title = {{Phenomenological Growth Regimes in Liquid-Precursor CVD of MoS$_2$ on Functional Substrates}},
author = {Osamah Kharsah and Kilian Mouchel and Yossarian Liebsch and Cathy Sulaiman and Joel Verlande and Anke Hierzenberger and Abdallah Alghazali and Clara Grygiel and Stéphane Guillous and Henning Lebius and Marika Schleberger},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2608.28269},
eprint = {2608.28269},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2608.28269},
}
RIS
TY - UNPB
TI - Phenomenological Growth Regimes in Liquid-Precursor CVD of MoS_2 on Functional Substrates
AU - Osamah Kharsah
AU - Kilian Mouchel
AU - Yossarian Liebsch
AU - Cathy Sulaiman
AU - Joel Verlande
AU - Anke Hierzenberger
AU - Abdallah Alghazali
AU - Clara Grygiel
AU - Stéphane Guillous
AU - Henning Lebius
AU - Marika Schleberger
PY - 2026
DA - 2026/09/17
PB - arXiv
DO - 10.48550/arxiv.2608.28269
UR - https://arxiv.org/abs/2608.28269
AB - The integration of two-dimensional transition-metal dichalcogenides (TMDCs) onto functional substrates remains constrained by stochastic vapor-phase growth dynamics. Here, we show that liquid-phase precursor chemical vapor deposition (CVD) of MoS_2 introduces growth conditions that are consistent with a substrate-influenced reaction-diffusion process. By utilizing pre-growth spin-coated MoO_3 intermediates across a diverse crystalline library (sapphire, SrTiO_3, rutile TiO_2, MgO, and 6H-SiC), we find that substrate-dependent variations in precursor wetting, surface chemistry, and inferred mass-transport constraints correlate with distinct growth morphologies. These substrate-dependent growth regimes are interpreted in terms of reduced effective lateral growth length on SrTiO_3, possible precursor anchoring on TiO_2, likely chemical surface restructuring on MgO, and possible step-edge growth on SiC. Raman and photoluminescence spectroscopy reveal substrate-dependent variations in vibrational and optical response that correlate with differences in strain, charge environment, and dielectric screening. Ultimately, this work highlights a substrate-dependent reaction-diffusion framework as a potentially useful route for tuning the structural and optical properties of large-area 2D materials.
ER -