Submicron Double Heterojunction Bipolar Transistors on Indium Phosphide‐on‐Silicon
Abstract
In this work, we report the fabrication and characterisation of an InGaAs/InP double heterojunction bipolar transistor (DHBT) on an indium phosphide-on-silicon (InPoSi) substrate. The device exhibits a DC current gain of 65. Dynamic measurements performed on a submicron 0.35 × 3 µm 2 device further confirm its high -frequency capability, with a current -gain cutoff frequency ( f T ) of 200 GHz and a maximum oscillation frequency ( f max ) of 90 GHz, indicating its suitability for high -frequency applications and the strong potential of the InPoSi platform for high -performance bipolar technologies. Thermal resistance ( R TH ) was extracted for a device with an area of 0.5 × 10 µm 2 , yielding a value of 5867 K/W, which is approximately 2.5 times higher than that of a standard DHBT on its own InP substrate with the same topology. This result provides important insight into the thermal management challenges associated with InPoSi-based DHBTs.
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BibTeX
@article{younes2026submicron,
title = {{Submicron Double Heterojunction Bipolar Transistors on Indium Phosphide‐on‐Silicon}},
author = {Rita Younes and Abdelmalek Zemour and Christophe Coinon and Malek Zegaoui and Yannick Roelens and Pascal Chevalier and Bruno Ghyselen and Mohammed Zaknoune},
journal = {Electronics Letters},
year = {2026},
month = oct,
doi = {10.1049/ell2.70730},
url = {https://hal.science/hal-05805459v1},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Submicron Double Heterojunction Bipolar Transistors on Indium Phosphide‐on‐Silicon
AU - Rita Younes
AU - Abdelmalek Zemour
AU - Christophe Coinon
AU - Malek Zegaoui
AU - Yannick Roelens
AU - Pascal Chevalier
AU - Bruno Ghyselen
AU - Mohammed Zaknoune
PY - 2026
DA - 2026/10/19
JO - Electronics Letters
DO - 10.1049/ell2.70730
UR - https://hal.science/hal-05805459v1
AB - In this work, we report the fabrication and characterisation of an InGaAs/InP double heterojunction bipolar transistor (DHBT) on an indium phosphide-on-silicon (InPoSi) substrate. The device exhibits a DC current gain of 65. Dynamic measurements performed on a submicron 0.35 × 3 µm 2 device further confirm its high -frequency capability, with a current -gain cutoff frequency ( f T ) of 200 GHz and a maximum oscillation frequency ( f max ) of 90 GHz, indicating its suitability for high -frequency applications and the strong potential of the InPoSi platform for high -performance bipolar technologies. Thermal resistance ( R TH ) was extracted for a device with an area of 0.5 × 10 µm 2 , yielding a value of 5867 K/W, which is approximately 2.5 times higher than that of a standard DHBT on its own InP substrate with the same topology. This result provides important insight into the thermal management challenges associated with InPoSi-based DHBTs.
SN - 0013-5194
SN - 1350-911X
ER -