Sub-Micron Gate β−Ga2O3 FinFETs with Current Density > 750 mA/mm and Ion/Ioff Ratio > 109
Abstract
In this work, we demonstrate submicron-gate β−Ga2O3 FinFETs that integrate Si delta-doped channels with selectively regrown n++ source/drain contacts. The devices employ 100 nm-wide fins to improve electrostatic control of a high sheet charge density channel of 3.3× 1013 cm-2. A 150 nm-gate-length FinFET exhibits a maximum drain current density of 764 mA/mm at VGS = 1 V and VDS = 10 V, an on-resistance of 9.1 Ω.mm, and an Ion/Ioff ratio exceeding 109. The device also shows a peak transconductance of 43 mS/mm and de-embedded fT/fMAX values of 6.3/2.0 GHz. Pulsed I-V measurements indicate ~20 % current collapse, attributed primarily to trapping at etched fin sidewalls and the Al2 O3/ β−Ga2O3 interface. These results show that delta-doped β−Ga2O3 FinFETs can simultaneously achieve high drive current, strong current modulation, and GHz-frequency operation, providing a scalable device platform for future power and RF electronics.
Related
- Reducing the Gate-Induced Drain-Leakage Current of Carbon-Nanotube Transistors by Subliming Dispersants with Back-End-of-Line Compatible Temperature
- 12 nm FinFETs from 292 K to 10 mK: Characterization and a Temperature-Continuous Compact Model for Qubit Control
- Current density functional theory in the age of generalized Kohn-Sham theories
- One-loop corrected holographic shear viscosity to entropy density ratio at low temperatures
- Counter-rotating density and current structures in a partially magnetized E×B plasma
BibTeX
@misc{das2026submicron,
title = {{Sub-Micron Gate $β-Ga_2O_3$ FinFETs with Current Density $>$ 750 mA/mm and Ion/Ioff Ratio $>$ $10^9$}},
author = {Nabasindhu Das and Cameron Gorsak and Pushpanshu Tripathi and Ankita Kashyap and Noor Jahan Nipu and Advait Gilankar and Hari Nair and Uttam Singisetti and Trevor Thornton and Nidhin Kurian Kalarickal},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.15155},
eprint = {2610.15155},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.15155},
}
RIS
TY - UNPB
TI - Sub-Micron Gate β−Ga_2O_3 FinFETs with Current Density > 750 mA/mm and Ion/Ioff Ratio > 10^9
AU - Nabasindhu Das
AU - Cameron Gorsak
AU - Pushpanshu Tripathi
AU - Ankita Kashyap
AU - Noor Jahan Nipu
AU - Advait Gilankar
AU - Hari Nair
AU - Uttam Singisetti
AU - Trevor Thornton
AU - Nidhin Kurian Kalarickal
PY - 2026
DA - 2026/10/10
PB - arXiv
DO - 10.48550/arxiv.2610.15155
UR - https://arxiv.org/abs/2610.15155
AB - In this work, we demonstrate submicron-gate β−Ga_2O_3 FinFETs that integrate Si delta-doped channels with selectively regrown n++ source/drain contacts. The devices employ 100 nm-wide fins to improve electrostatic control of a high sheet charge density channel of 3.3× 10^13 cm-2. A 150 nm-gate-length FinFET exhibits a maximum drain current density of 764 mA/mm at VGS = 1 V and VDS = 10 V, an on-resistance of 9.1 Ω.mm, and an Ion/Ioff ratio exceeding 10^9. The device also shows a peak transconductance of 43 mS/mm and de-embedded f_T/f_MAX values of 6.3/2.0 GHz. Pulsed I-V measurements indicate ~20 % current collapse, attributed primarily to trapping at etched fin sidewalls and the Al_2 O_3/ β−Ga_2O_3 interface. These results show that delta-doped β−Ga_2O_3 FinFETs can simultaneously achieve high drive current, strong current modulation, and GHz-frequency operation, providing a scalable device platform for future power and RF electronics.
ER -